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In photovoltaic detectors, or photodiodes, the semiconductor layer is composed of InAsSb or InAs materials. Charge carriers produced by absorbed photons accumulate at the photodiodes, which have complex current-voltage properties.
The detectors can either work with reverse voltage or at flicker-free zero bias. Such detectors are mercury-free and cadmium-free. The detectors therefore fulfill the RoHS directive and are suitable for the consumer market.
Source: VIGO System
HgCdTe (MCT) Photoconductive Detector
Photovoltaic Detector: HgCdTe (MCT)
The LabM Series of Infrared Detection Modules from VIGO System
The MicroM Series of Infrared Detection Modules from VIGO System
The UHMS Series of Ultra-High-Speed Infrared Detection Modules from VIGO System
The UM Series of Infrared Detection Modules from VIGO System
VIGO System’s Affordable MWIR Detection Module