Researchers Develop Low-Cost Mobile Tool for Onsite Arsenic Detection in Water

Researchers at the Indian Institute of Technology (IIT) Jodhpur have developed an affordable, portable tool to detect arsenic contamination in water—a serious environmental and public health concern.

Girl drinking from water tap.

Image Credit: Riccardo Mayer/Shutterstock.com

Detailed in the journal Nanotechnology by IOP Publishing, the device offers a practical, low-cost solution for monitoring water quality in real-time, particularly in low-income areas where access to clean drinking water remains limited.

This newly developed sensor is the first of its kind to deliver accurate, repeatable results on-site without relying on complex laboratory equipment or specialized personnel.

Arsenic-contaminated water poses a severe health risk, contributing to conditions such as skin cancer and other long-term illnesses, even at trace levels. According to estimates, chronic arsenic exposure is linked to nearly 43,000 deaths each year.

While traditional arsenic detection methods—like spectroscopic and electrochemical techniques—are highly sensitive, they typically require costly equipment and trained operators, making them impractical for widespread use, especially in underserved regions.

The new device, however, leverages advanced sensor technology to detect arsenic ions at extremely low concentrations. It can measure levels as low as 0.90 parts per billion (ppb) and delivers results in just 3.2 seconds.

We’ve designed the sensor with usability in mind, ensuring that even people in remote areas can benefit from it. By connecting the sensor to a circuit board and an Arduino module for real-time data transmission, we’ve made it perfect for portable and onsite detection. Our ultimate goal is to reduce the number of deaths and prevent the serious diseases caused by arsenic contamination and to provide safer drinking water for everyone.

Mahesh Kumar, Study Lead Author, Indian Institute of Technology (IIT) Jodhpur

Journal Reference:

Sharma, N., et al. (2025) CVD-grown SnS2 active layers on AlGaN/GaN HEMT for arsenic (III) ions detection. Nanotechnology. doi.org/10.1088/1361-6528/adcc37

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