Hamamatsu Photonics is proud to announce the release of the G15978-0020P, a new InGaAs photodiode (InGaAs PD) representing the next step in miniaturized sensor technology. Designed for accurate distance measurement and low-light level detection applications, this device meets the demanding needs of Research and Development professionals, engineers, industrial applications, and OEM customers alike.
G15978-0020P InGaAs photodiode. Image Credit: Hamamatsu Photonics Europe
The G15978-0020P boasts a surface-mount type COB package, making it significantly smaller than the previously available metal package type, G14858-0020AA. The G15978-0020P’s size is ideal for integration into compact and mobile equipment, facilitating advancements in various modern applications, and its enhanced sensitivity is suitable for such technologies as touchless displays, automatic faucets, and free space communications.
Key Features:
- Compact design: with dimensions of just 1.6 mm × 0.8 mm × 0.7 mm.
- Exceptional performance with low dark current: max 50 nA
- Low capacitance: Terminal capacitance (typ.) 2.0 pF
- Enhanced sensitivity: Peak sensitivity wavelength (typ.) 1550 nm, Photosensitivity (typ.) 0.8 A/W.
- Compatible with lead-free reflow soldering, supporting higher reliability in harsh conditions and less harmful manufacturing processes
With a commitment to durability and reliability, the G15978-0020P is built with high-quality materials to withstand daily wear and tear, ensuring long-term performance. Additionally, the product is aligned with sustainable practices, avoiding the use of harmful materials in its composition, and aiding with adherence to RoHS directives.
“We are excited to introduce G15978-0020P to the market,” said Luigi Ghezzi, Technical Marketing Engineer at Hamamatsu Photonics, Europe. “This product not only reflects our commitment to innovation and quality but also addresses the evolving needs of our customers towards component miniaturization for precise mobile applications.”