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Samsung Electronics Launches Two New CMOS Image Sensors with BSI

Samsung Electronics, a pioneer in the field of advanced semiconductor applications, launched the S5K4E5 and the S5K2N1, two new 1.4 micron CMOS imagers, based on the BSI (back side illuminated) pixel technology. They perform excellently in low-light settings.

The S5K4E5 is ideal for smart phones, while the S5K2N1 is suitable for DSC (digital still cameras) and DVC (digital video cameras). Both the imagers would be showcased in the 7th Annual Samsung Mobile Solutions Forum, to be held in Westin Taipei Hotel, Taiwan.

According to Dojun Rhee, Vice President of Marketing, Samsung, the demand for such type of equipments keep increasing. Normally the industry’s preference is CCD technology, but Samsung’s small pixel size, along with high sensitivity levels under low lighting conditions and video capture features, makes it a perfect option for both smartphones and conventional handy cams.

As an antithesis to equipments using front side illumination options, the BSI amasses photons from pixel’s backside, making the photodiode to function at peak efficiency levels, as loss of photons is normally due to scattering of light which does not take place here. Thus BSI is the answer to low- light sensitivity problems faced by CMOS image sensors, as the new BSI imagers produce 30% more low- light sensitivity than the regular front -side illumination devices. By working on parameters, Samsung could control crosstalk and hence enhance electrical, color, and optical performance levels.

S5K4E5 5 mega pixel (Mp) and the S5K2N1, 14.6 Mp imagers, both offer 30 fps at full resolution, and also deliver full HD (high definition) resolution video at 60 fps. Samples of 5Mp are complete now, with mass production commencing during the last quarter of 2010, while the S5K2N1 would be sampling in the fourth quarter of 2010, and produced in volume by the first quarter of 2011.


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