STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, announced today its close collaboration with Memoir Systems has made the revolutionary Algorithmic Memory Technology available for embedded memories in application-specific integrated circuits (ASICs) and Systems on Chips (SoCs) manufactured in ST’s fully-depleted silicon-on-insulator (FD-SOI) process technology.
When integrated into products made using ST’s FD-SOI, Memoir’s Algorithmic Memories deliver uncompromised performance as a result of FD-SOI’s recognized power and performance advantages1. Moreover, combining FD-SOI’s extremely low Soft Error Rate2 and ultra-low leakage currents creates a uniquely compelling value proposition for mission-critical applications, including networking, transportation, medical, and aerospace programs.
“On its own, FD-SOI process technology produces ASICs and SoCs that run faster and cooler than devices built from alternative process technologies,” said Philippe Magarshack, Executive Vice President, Design Enablement and Services, STMicroelectronics. “In adding outstanding third-party intellectual property from Memoir Systems, we are making FD-SOI even more appealing and demonstrating how simple porting is.”
“With our commitment to breakthrough memory technology, accelerated design times, and extreme high-performance, making our best-in-class Algorithmic Memory Technology available on FD-SOI was important to us and our customers, “said Sundar Iyer, co-founder and CEO at Memoir Systems. “The ease of porting, together with the performance we’ve seen, confirms that FD-SOI is faster, cooler, and simpler.”
A leading manufacturer of ASICs, ST is the first semiconductor supplier to make available the exciting fully-depleted silicon-on-insulator (FD-SOI) process technology that extends and simplifies existing planar, bulk-silicon manufacturing approaches. An FD-SOI transistor operates at higher frequencies than equivalent transistor manufactured using bulk CMOS because of improved transistor electrostatic characteristics and a shorter channel length.
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