Jan 7 2013
RDA Microelectronics ("RDA Microelectronics" or the "Company"), a fabless semiconductor company that designs, develops and markets wireless SoC and Radio Frequency (RF) semiconductors for cellular, connectivity and broadcast applications, today announced sampling of its RDA6821 and RDA6822 High Band WCDMA PA products for Band 1 (2100 MHz) and Band 2 (1900 MHz) applications. With the launch of these products, RDA now provides a complete 3G WCDMA PA offering for emerging markets.
RDA's WCDMA PAs are developed on proven GaAs HBT and SOI CMOS process technology, enabling the highest level of efficiency and linearity. GaAs HBT provides superior performance for medium and high-power modes, while SOI CMOS offers integrated switching capabilities, excellent low-power performance and an additional bypass option. This unique process architecture combined with an innovative two-layer substrate solution provides additional cost savings for customers choosing RDA's 3G PA solutions. The RDA 6821 and RDA 6822 are packaged in a small 3mm x 3mm form factor and pin-compatible with all industry standard counterparts.
"Our latest offering of High Band WCDMA PAs provides RDA a complete solution for emerging market handsets, which is part of our broader strategy to expand our product lines and diversify our 3G solutions," commented Vincent Tai, chairman and CEO of RDA Microelectronics. "RDA's offering provides customers high performance, low power solutions at a cost-effective price point. We are excited to begin sampling these solutions to our customers and demonstrating the value of these products for the rapidly growing 3G market."
Source: http://www.rdamicro.com